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SUD19N20-90
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
0.090 at V GS = 10 V
200
0.105 at V GS = 6 V
I D (A)
19
17.5
FEATURES
? TrenchFET ? Power MOSFET
? 175 °C Junction Temperature
? PWM Optimized
? 100 % R g Tested
?
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Primary Side Switch
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
200
± 20
Unit
V
Continuous Drain Current (T J = 175 °C) b
T C = 25 °C
T C = 125 °C
I D
19
11
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
I DM
I S
I AS
40
19
19
A
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
E AS
P D
T J , T stg
18
136 b
3 a
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient a
Junction-to-Case (Drain)
t ? 10 s
Steady State
R thJA
R thJC
15
40
0.85
18
50
1.1
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
www.vishay.com
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